Probing the properties of metal-oxide interfaces: silica films on Mo and Ru supports.

The influence of metal-oxide interactions on the workfunction and band alignment in thin oxide films is investigated for silica mono- and bilayers grown on Mo(112) and Ru(0001) supports. By analyzing the position of field-emission resonances and the Kelvin-probe signal deduced from conductance and force spectroscopy, we have identified a substantial lowering of the workfunction in the monolayer films, with the oxide bands shifting accordingly. We explain this observation with a stronger coupling and a shorter binding length of the silica monolayer to the metal substrate, which removes the effect of electron spill-out, produces a positive interface dipole and reduces the workfunction of the system. In contrast, the van der Waals bound bilayer film interacts only weakly with the Ru support, conserving the effect of electron spill-out and keeping the workfunction high. Direct evidence for the relevance of interface interactions comes from experiments on buckled silica films, for which regular workfunction modulations are revealed that follow the topographic height of the film above the metal surface.